Utvalda publikationer
19. STM studies of the electronic structure of PTCDA on Ag/Si(111)sqrt3xsqrt3
H. M. Zhang, J. B. Gustafsson, and L. S. O. Johansson
Chemical Physics Letters 485, 69 (2010).
18. Coverage dependence and surface atomic structure of Mn/Si(111)-sqrt3×sqrt3studied by scanning tunneling microscopy and spectroscopy
J. Hirvonen Grytzelius, H. M. Zhang, and L. S. O. Johansson
Phys. Rev. B 80, 235324 (2009).
17. Electronic structure of H/Ge(111)1x1 studied by angle-resolved photoelectron spectroscopy
C. Razado-Colambo, H. M. Zhang, and R. I. G. Uhrberg
Phys. Rev. B 80, 193403 (2009).
16. Surface electronic structure of Mn/Si(111)-sqrt3xsqrt3
J. Hirvonen Grytzelius, H. M. Zhang, and L. S. O. Johansson
Phys. Rev. B 78, 155406 (2008).
15. High-temperature annealing and surface photovoltage shifts on Si(111)7x7
H. M. Zhang, Kazuyuki Sakamoto, G. V. Hansson, and R. I. G. Uhrberg
Phys. Rev. B 78, 035318 (2008).
14. Surface atomic structure of Ag/Si(111) )sqrt3xsqrt3
H. M. Zhang, J. B. Gustafsson, and L. S. O. Johansson
Phys. Rev. B 74, 201304 (R) (2006).
13. Electron spectroscopy studies of PTCDA on Ag/Si(111) )-sqrt3xsqrt3
J. B. Gustafsson, H. M. Zhang, E. Moons, L. S. O. Johansson
Phys. Rev. B 75, 155413 (2007)
12. STM studies of thin PTCDA films on Ag/Si(111) )-sqrt3xsqrt3
J. B. Gustafsson, H. M. Zhang, L. S. O. Johansson
Phys. Rev. B 75, 155414 (2007).
11. Ag/Si(111) )sqrt3xsqrt3: Surface band splitting and the IET-model
H. M. Zhang and R. I. G. Uhrberg,
Phys. Rev. B 74, 195329 (2006).
10. STM study of site selective hydrogen adsorption on Si(111)7x7
I. C. Razado, H. M. Zhang, R. I. G. Uhrberg, and G. V. Hansson,
Phys. Rev. B 71, 235411 (2005).
9. Surface electronic structure of K and Cs-induced sqrt21xsqrt21 phases on Ag/Si(111)sqrt3xsqrt3
H. M. Zhang, K. Sakamoto, and R. I. G. Uhrberg,
Phys. Rev. B 70, 245301 (2004).
8. Scanning Tunneling Microscopy Study of Ag/Ge(111): Observation of
Surface Reconstruction Transformations
H.M. Zhang and R.I.G. Uhrberg,
Surf. Sci. Lett. 546, (2003) L789-L796.
7. Surface electronic structure study of Au/Si(111) reconstructions:
Observation of a crystal-to-glass transition
H.M. Zhang, T. Balasubramanian, and R.I.G. Uhrberg
Phys. Rev. B 66, 165402 (2002).
6. Nature of the broken-symmetry phase of the one-dimensional metallic In/Si(111) surface
H.W. Yeom, K. Horikoshi, H.M. Zhang, K. Ono, and R.I.G. Uhrberg
Phys. Rev. B 65, 241307 (R) (2002).
5. Photoelectron spectroscopy study of Ag/Si(111)sqrt3xsqrt3 and
the effect of additional Ag adatoms
R.I.G. Uhrberg, H.M. Zhang, T. Balasubramanian, E. Landmark, and H.W. Yeom
Phys. Rev. B 65, 081305(R) (2002).
4. Comprehensive study of the metal/semiconductor character
of adatom-induced Ag/Si(111) reconstructions
H.M. Zhang, K. Sakamoto, and R.I.G. Uhrberg
Phys. Rev. B 64, 245421 (2001).
3. Core level photoelectron spectroscopy study of the Au/Si(111) 5x2,
alpha-sqrt3xsqrt3, beta-sqrt3xsqrt3, and 6x6 surfaces
H.M. Zhang, T. Balasubramanian, and R.I.G. Uhrberg
Phys. Rev. B 65, 035314 (2001).
2. Metal to semiconductor transition on Ag/Ge(111): Surface electronic
structure of the sqrt3xsqrt3, sqrt39xsqrt39, and 6x6 surfaces
H.M. Zhang, T. Balasubramanian, and R.I.G. Uhrberg
Phys. Rev. B 63, 195402 (2001).
1. Determination of the Sn 4d Line Shape of the Sn/Ge(111) sqrt3xsqrt3 and 3x3 Surfaces,
R.I.G. Uhrberg, H.M. Zhang, and T. Balasubramanian,
Phys. Rev. Lett. 85, 1036 (2000).